JR28F064M29EWLA
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JR28F064M29EWLA характеристики
Флеш память, NOR, 64 Мбит, 8М x 8бит, Параллельный, TSOP, 48 вывод(-ов).
The JR28F064M29EWLA is a 64MB asynchronous parallel NOR Flash EMBedded Memory manufactured on 65nm single-bit cell (SBC) technology. READ, ERASE and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards. The M29EW supports asynchronous random read and page read from all blocks of the array. It also features an internal program buffer that improves throughput by programming 256 words via one command sequence.
Техническое описание
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