HGTP12N60A4D
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HGTP12N60A4D характеристики
БТИЗ транзистор, 54 А, 2.7 В, 167 Вт, 600 В, TO-220AB, 3 вывод(-ов).
The HGTP12N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
Техническое описание
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Вы можете купить HGTP12N60A4D от 1 штуки. Работаем с частными лицами и с юридическими лицами по безналичному расчету.
Доступно на складе 76616 штук. Цена HGTP12N60A4D зависит от объёма заказа, минимальная стоимость составляет 529.2 руб.